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PD - 97498
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features
* * * * * * * * Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Ultra fast soft recovery co-pak diode Tight parameter distribution Lead-Free
IRG7PH46UDPBF IRG7PH46UD-EP
C
VCES = 1200V I NOMINAL = 40A
G E
TJ(max) = 150C
Benefits
* High efficiency in a wide range of applications * Suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses * Rugged transient performance for increased reliability * Excellent current sharing in parallel operation
n-channel
C
VCE(on) typ. = 1.7V
C
Applications
* * * * U.P.S. Welding Solar Inverter Induction Heating
GC
E
TO-247AC IRG7PH46UDPBF
E GC TO-247AD IRG7PH46UD-EP
G Gate
C Collector
E Emitter
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 100C INOMINAL ICM ILM IF @ TC = 25C IF @ TC = 100C IFM VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current (Silicon Limited) Continuous Collector Current (Silicon Limited) Nominal Current Pulse Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V Diode Continous Forward Current Diode Continous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m)
Max.
1200 108 57 40 120 160 108 57 160 30 390 156 -55 to +150
Units
V
c
A
d
Continuous Gate-to-Emitter Voltage
V W
C
Thermal Resistance
RJC (IGBT) RJC (Diode) RCS RJA
f Thermal Resistance Junction-to-Case-(each Diode) f
Thermal Resistance Junction-to-Case-(each IGBT) Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount)
Parameter
Min.
--- --- --- ---
Typ.
--- --- 0.24 40
Max.
0.32 0.66 --- ---
Units
C/W
1
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04/26/2010
IRG7PH46UDPBF/IRG7PH46UD-EP
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
V(BR)CES
V(BR)CES/TJ
Min.
1200 -- -- -- 3.0 -- -- -- -- -- -- --
Typ.
-- 1.2 1.7 2.0 -- -13 50 1.5 2.0 3.1 3.0 --
Max. Units
-- -- 2.0 -- 6.0 -- -- 100 -- 4.8 -- 200 nA V
Conditions
VGE = 0V, IC = 100A
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
e
VCE(on) VGE(th)
VGE(th)/TJ
Collector-to-Emitter Saturation Voltage Gate Threshold Voltage Threshold Voltage temp. coefficient Forward Transconductance Collector-to-Emitter Leakage Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current
V/C VGE = 0V, IC = 1.0mA (25C-150C) IC = 40A, VGE = 15V, TJ = 25C V IC = 40A, VGE = 15V, TJ = 150C VCE = VGE, IC = 1.6mA V mV/C VCE = VGE, IC = 1.6mA (25C - 150C) VCE = 50V, IC = 40A, PW = 20s S A mA V VGE = 0V, VCE = 1200V VGE = 0V, VCE = 1200V, TJ = 150C IF = 40A IF = 40A, TJ = 150C VGE = 30V
gfe ICES VFM IGES
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
Qg Qge Qgc Eon Eoff Etotal td(on) tr td(off) tf Eon Eoff Etotal td(on) tr td(off) tf Cies Coes Cres RBSOA Erec trr Irr Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operating Area Reverse Recovery Energy of the Diode Diode Reverse Recovery Time Peak Reverse Recovery Current
Min.
-- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- --
Typ.
220 30 85 2610 1845 4455 45 40 410 45 3790 2905 6695 40 40 480 200 4820 150 110
Max. Units
320 50 130 3515 2725 6240 60 60 450 60 -- -- -- -- -- -- -- -- -- -- pF ns J ns J nC IC = 40A
d
Conditions
VGE = 15V VCC = 600V IC = 40A, VCC = 600V, VGE = 15V RG = 10, L = 200H,TJ = 25C
g
Energy losses include tail & diode reverse recovery
IC = 40A, VCC = 600V, VGE=15V RG=10, L=200H, TJ = 150C
g
Energy losses include tail & diode reverse recovery
VGE = 0V VCC = 30V f = 1.0Mhz TJ = 150C, IC = 160A VCC = 960V, Vp 1200V Rg = 10, VGE = +20V to 0V
FULL SQUARE -- -- -- 1130 140 40 -- -- -- J ns A
TJ = 150C VCC = 600V, IF = 40A Rg = 10, L =1.0mH
Notes: VCC = 80% (VCES), VGE = 20V, L = 200H, RG = 10. Pulse width limited by max. junction temperature. Refer to AN-1086 for guidelines for measuring V(BR)CES safely. R is measured at TJ of approximately 90C. Values influenced by parasitic L and C of the test circuit.
2
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IRG7PH46UDPBF/IRG7PH46UD-EP
100 Duty cycle : 50% Tj = 150C Tc = 100C Vcc = 600V Gate drive as specified Power Dissipation = 154W 80
Load Current ( A )
Square Wave:
60
VCC
40
I
20
Diode as specified
0 0.1 1 f , Frequency ( kHz ) 10 100
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
120 100 80 60 40 20 0 25 50 75 100 125 150
Ptot (W)
400 350 300 250 200 150 100 50 0 25 50 75 100 125 150 T C (C)
IC (A)
Fig. 1 - Maximum DC Collector Current vs. Case Temperature
1000
T C (C)
Fig. 2 - Power Dissipation vs. Case Temperature
1000
100 10sec
100
IC (A)
IC (A)
10 DC 1 Tc = 25C Tj = 150C Single Pulse 0.1 1 10 100 VCE (V) 1000 10000 100sec 1msec
10
1 10 100 VCE (V) 1000 10000
Fig. 3 - Forward SOA TC = 25C, TJ 150C; VGE =15V
Fig. 4 - Reverse Bias SOA TJ = 150C; VGE = 20V
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3
IRG7PH46UDPBF/IRG7PH46UD-EP
160 140 120 100
ICE (A)
160 140 120
80 60 40 20 0 0 2 4
VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V
100
ICE (A)
80 60 40 20 0
VGE = 18V VGE = 15V VGE = 12V VGE = 10V
VGE = 8.0V
6
8
10
0
2
4
6
8
10
VCE (V)
VCE (V)
Fig. 5 - Typ. IGBT Output Characteristics TJ = -40C; tp = 30s
160 140 120 100 VGE = 18V VGE = 15V VGE = 12V
Fig. 6 - Typ. IGBT Output Characteristics TJ = 25C; tp = 30s
160 140 120 100 -40C 25C 150C
ICE (A)
80 60 40 20 0 0 2 4 6
IF (A)
10
80 60 40 20 0
VGE = 10V VGE = 8.0V
8
0.0
1.0
2.0
3.0 VF (V)
4.0
5.0
6.0
VCE (V)
Fig. 7 - Typ. IGBT Output Characteristics TJ = 150C; tp = 30s
12 10 8
VCE (V)
Fig. 8 - Typ. Diode Forward Characteristics tp = 30s
12 10 8
VCE (V)
6 4 2 0 4 8
ICE = 20A ICE = 40A ICE = 80A
6 4 2 0
ICE = 20A ICE = 40A ICE = 80A
12 VGE (V)
16
20
4
8
12 VGE (V)
16
20
Fig. 9 - Typical VCE vs. VGE TJ = -40C
Fig. 10 - Typical VCE vs. VGE TJ = 25C
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IRG7PH46UDPBF/IRG7PH46UD-EP
12
ICE, Collector-to-Emitter Current (A)
120 100 80 60 40 20 0 T J = 25C T J = 150C
10 8
VCE (V)
6 4 2 0 4 8
ICE = 20A ICE = 40A ICE = 80A
12 VGE (V)
16
20
4
5
6
7
8
9
VGE, Gate-to-Emitter Voltage (V)
Fig. 11 - Typical VCE vs. VGE TJ = 150C
9000 8000 7000 6000
Energy (J)
Fig. 12 - Typ. Transfer Characteristics VCE = 50V
1000 tdOFF
Swiching Time (ns)
5000 4000 3000 2000 1000 0 0 10 20 30
EON
tF 100 tdON
EOFF
tR 10
40 IC (A) 50 60 70 80
0
10
20
30
40 IC (A)
50
60
70
80
Fig. 13 - Typ. Energy Loss vs. IC TJ = 150C; L = 200H; VCE = 600V, RG = 10; VGE = 15V
10000 9000 8000
Energy (J)
Fig. 14 - Typ. Switching Time vs. IC TJ = 150C; L = 200H; VCE = 600V, RG = 10; VGE = 15V
10000
EOFF
Swiching Time (ns)
1000
tdOFF
7000 6000 5000 4000 3000 2000 0 20 40 60 80 100 RG () EON
tF 100 tdON tR
10 0 20 40 60 80 100 RG ()
Fig. 15 - Typ. Energy Loss vs. RG TJ = 150C; L = 200H; VCE = 600V, ICE = 40A; VGE = 15V
Fig. 16 - Typ. Switching Time vs. RG TJ = 150C; L = 200H; VCE = 600V, ICE = 40A; VGE = 15V
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IRG7PH46UDPBF/IRG7PH46UD-EP
50
40
40
35
RG = 5.0
IRR (A)
30
RG = 10 RG = 47
IRR (A)
30
25
20
20
RG = 100
10 10 20 30 40 50 60 70 80 IF (A)
15 0 20 40 60 80 100 RG ()
Fig. 17 - Typ. Diode IRR vs. IF TJ = 150C
40
6000
Fig. 18 - Typ. Diode IRR vs. RG TJ = 150C
35
5000 80A
QRR (C)
IRR (A)
30
4000
40A 10 20A
5.0
25
3000 47 100
20
2000
15 200 300 400 500 600 700 800 diF /dt (A/s)
1000 100 200 300 400 500 600 700 800 900 1000 diF /dt (A/s)
Fig. 19 - Typ. Diode IRR vs. diF/dt VCC = 600V; VGE = 15V; IF = 40A; TJ = 150C
1600 RG = 5.0 RG = 10 1200
Fig. 20 - Typ. Diode QRR vs. diF/dt VCC = 600V; VGE = 15V; TJ = 150C
RG = 47 RG = 100
Energy (J)
800
400
0 20 30 40 50 IF (A) 60 70 80
Fig. 21 - Typ. Diode ERR vs. IF TJ = 150C
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IRG7PH46UDPBF/IRG7PH46UD-EP
10000 Cies
Capacitance (pF)
VGE, Gate-to-Emitter Voltage (V)
16 14 12 10 8 6 4 2 0 VCES = 600V VCES = 400V
1000
100
Coes
Cres 10 0 100 200 300 VCE (V) 400 500 600
0
40
80
120
160
200
240
Q G, Total Gate Charge (nC)
Fig. 22 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz
1
Fig. 23 - Typical Gate Charge vs. VGE ICE = 40A; L = 2400H
D = 0.50
Thermal Response ( Z thJC )
0.1
0.20 0.10 0.05
0.01
0.02 0.01
J
R1 R1 J 1 2
R2 R2
R3 R3 3
R4 R4 C 4
Ri (C/W)
0.01330 0.08573 0.12712 0.09903
0.000031 0.001470 0.002625 0.012121
i (sec)
1
2
3
4
0.001 SINGLE PULSE ( THERMAL RESPONSE )
Ci= i/Ri Ci i/Ri
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 1
0.0001 1E-006
1E-005
t1 , Rectangular Pulse Duration (sec)
Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
1 D = 0.50
Thermal Response ( Z thJC )
0.1
0.20 0.10 0.05
0.01
0.02 0.01
J J 1
R1 R1 2
R2 R2
R3 R3 3
R4 R4 C 4
Ri (C/W)
0.007488 0.235126 0.280054 0.136283
i (sec)
0.000016 0.00057 0.00409 0.022342
1
2
3
4
0.001 SINGLE PULSE ( THERMAL RESPONSE )
Ci= i/Ri Ci i/Ri
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 1
0.0001 1E-006
1E-005
t1 , Rectangular Pulse Duration (sec)
Fig. 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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IRG7PH46UDPBF/IRG7PH46UD-EP
L
L
0
DUT 1K
VCC
80 V +
-
DUT Rg
VCC
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
diode clamp / DUT L
R=
VCC ICM
-5V DUT / DRIVER Rg VCC
Rg
DUT
VCC
Fig.C.T.3 - Switching Loss Circuit
Fig.C.T.4 - Resistive Load Circuit
C force
100K D1 DUT
0.0075F
22K
C sense
G force
E sense
E force
Fig.C.T.5 - BVCES Filter Circuit
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IRG7PH46UDPBF/IRG7PH46UD-EP
900 800 700 600 500 VCE (V) 400 300 200 100 0 -100 -0.5
Eoff Loss
5% VCE
90 tf 80 70 60 50
VCE (V)
900 800 700 600 500 tr
TEST CURRENT
90 80 70 60 50
90% test current
ICE (A)
90% ICE
40 30 20
400 300 200 100 0 -100 -2 -1 0 1
1 tes t 0% current
40 30 20 10 0 -10 5
5% V CE
5% ICE
10 0 -10 1.5 2
Eon Loss 2 3 4
0
0.5
1
time(s)
Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 150C using Fig. CT.4
time (s)
Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 150C using Fig. CT.4
50 40 30 20 10 IF (A) 0 -10 -20 -30 -40 -50 -0.20 0.00 0.20 time (S)
Fig. WF3 - Typ. Diode Recovery Waveform @ TJ = 150C using Fig. CT.4
Peak IRR 10% Peak IRR
EREC
tRR
0.40
0.60
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ICE (A)
9
IRG7PH46UDPBF/IRG7PH46UD-EP
Dimensions are shown in millimeters (inches)
TO-247AC Package Outline
TO-247AC Part Marking Information
@Y6HQG@) UCDTADTA6IADSAQ@"A XDUCA6TT@H7GA GPUA8P9@A$%$& 6TT@H7G@9APIAXXA"$A! DIAUC@A6TT@H7GAGDI@AACA Ir)AAQAAvAhriyAyvrAvv vqvphrAAGrhqArrA
DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G GPUA8P9@
Q6SUAIVH7@S
,5)3(
A "$C $%AAAAAAAAAAA$&
96U@A8P9@ @6SA A2A! X@@FA"$ GDI@AC
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRG7PH46UDPBF/IRG7PH46UD-EP
Dimensions are shown in millimeters (inches)
TO-247AD Package Outline
TO-247AD Part Marking Information
@Y6HQG@) UCDTADTA6IADSBQ"7 !F9@ XDUCA6TT@H7GA GPUA8P9@A$%$& 6TT@H7G@9APIAXXA"$A! DIAUC@A6TT@H7GAGDI@AACA Ir)AAQAAvAhriyAyvrAvv vqvphrAAGrhqArrA DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G GPUA8P9@ Q6SUAIVH7@S
A"$C $%AAAAAAAAAAA$&
96U@A8P9@ @6SAA2A! X@@FA"$ GDI@AC
TO-247AD package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 04/2010
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